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| 2SC5758 Silicon NPN Epitaxial VHF / UHF Wide band amplifier REJ03G0754-0500 (Previous ADE-208-1397D) Rev.5.00 Aug.10.2005 Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm) Outline RENESAS Package code: PUSF0003ZA-A (Package name: MFPAK R ) 3 1 2 1. Emitter 2. Base 3. Collector Note: Marking is "WF-". *MFPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 10 3.5 1.5 80 80 150 -50 to +150 Unit V V V mA mW C C Rev.5.00 Aug 10, 2005 page 1 of 8 2SC5758 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cob fT PG NF Min 10 80 0.65 6 10 Typ 100 0.95 8 13 1.0 Max 600 200 100 130 1.25 2.0 Unit V nA nA nA pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = VEB = 1.5 V, IC = 0 VCB = 1 V, IC = 5 mA VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 5 mA VCE = 1 V, IC = 5 mA, f = 900 MHz VCE = 1 V, IC = 5 mA, f = 900 MHz Rev.5.00 Aug 10, 2005 page 2 of 8 2SC5758 Main Characteristics Collector Power Dissipation Curve Typical Output Characteristics 50 Pc (mW) 100 500 A 450 A 400 A 350 A IC (mA) 80 40 300 250 A A A Collector Power Dissipation 60 30 Collector Current 200 40 20 150 A 100 A 20 10 IB = 50 A 0 50 100 150 200 0 0.5 1 1.5 2 2.5 3 3.5 Ambient Temperature Ta (C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics 50 DC Current Transfer Ratio vs. Collector Current 200 IC (mA) 30 DC Current Transfer Ratio 40 hFE VCE = 1 V VCE = 1 V Collector Current 100 20 10 0 0 0.2 0.4 0.6 0.8 1 1 2 5 10 20 50 100 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current Cob (pF) fT (GHz) 2.0 IE = 0 f = 1 MHz 20 VCE = 1 V f =2 GHz 1.6 16 Collector Output Capacitance 1.2 Gain Bandwidth Product 0.4 0.8 1.2 1.6 12 0.8 8 0.4 4 0 1 2 5 10 20 50 100 0 2.0 Collector to Base Voltage VCB (V) Collector Current IC (mA) Rev.5.00 Aug 10, 2005 page 3 of 8 2SC5758 Power Gain vs. Collector Current 20 5 VCE = 1 V f = 900 MHz Noise Figure vs. Collector Current VCE = 1 V f = 900 MHz 4 PG (dB) 16 12 NF (dB) Noise Figure 3 Power Gain 8 2 4 0 1 2 5 10 20 50 100 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Collector Current IC (mA) Rev.5.00 Aug 10, 2005 page 4 of 8 2SC5758 S11 Parameter vs. Frequency .8 .6 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 150 30 1 1.5 2 S21 Parameter vs. Frequency Scale: 8 / div. 90 120 60 3 45 10 180 0 -10 -.2 -5 -4 -3 -.4 -.6 -.8 -1.5 -2 -120 -150 -30 -60 -90 -1 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) ( IC = 5 mA) ( IC = 20 mA) Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) S12 Parameter vs. Frequency Scale: 0.06 / div. 90 120 60 .4 S22 Parameter vs. Frequency .8 .6 1 1.5 2 3 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -.4 -120 -2 -.6 -.8 -1 -1.5 -5 -4 -3 -60 -90 Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Condition: VCE = 1 V , ZO = 50 100 to 2000 MHz (100 MHz Step) (IC = 5 mA) (IC = 20 mA) Rev.5.00 Aug 10, 2005 page 5 of 8 2SC5758 Sparameter (VCE = 1V, IC = 5mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.806 0.713 0.635 0.560 0.529 0.500 0.486 0.474 0.467 0.466 0.461 0.464 0.464 0.467 0.465 0.476 0.480 0.480 0.490 0.487 ANG -31.9 -61.5 -85.3 -102.7 -117.1 -127.8 -137.2 -144.1 -151.1 -157.1 -162.4 -166.1 -169.9 -173.8 -177.2 179.9 177.4 173.4 172.0 169.3 MAG 14.60 12.31 10.02 8.22 6.94 5.97 5.20 4.65 4.14 3.77 3.45 3.19 2.99 2.78 2.62 2.46 2.36 2.24 2.14 2.06 S21 ANG 157.6 138.9 125.3 115.4 108.4 103.1 98.6 94.6 91.7 88.4 85.9 83.4 81.3 79.1 77.3 75.2 73.4 71.8 70.2 68.6 MAG 0.038 0.067 0.085 0.096 0.104 0.111 0.117 0.123 0.129 0.135 0.141 0.147 0.153 0.159 0.166 0.174 0.180 0.187 0.195 0.202 S12 ANG 72.8 59.5 51.3 47.2 45.5 44.6 44.8 45.7 46.7 47.7 48.6 49.7 51.0 51.8 53.0 53.8 54.7 55.6 56.5 57.0 MAG 0.901 0.757 0.610 0.501 0.421 0.360 0.314 0.278 0.249 0.226 0.208 0.194 0.181 0.172 0.165 0.159 0.155 0.154 0.154 0.153 S22 ANG -24.3 -44.8 -60.1 -70.9 -79.8 -87.2 -93.1 -99.7 -105.1 -110.9 -116.0 -121.4 -127.1 -131.7 -137.5 -141.6 -147.4 -152.9 -157.6 -162.5 Rev.5.00 Aug 10, 2005 page 6 of 8 2SC5758 (VCE = 1V, IC = 20mA, Zo = 50) S11 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 MAG 0.487 0.466 0.465 0.459 0.461 0.462 0.468 0.468 0.474 0.473 0.478 0.486 0.477 0.493 0.493 0.502 0.506 0.511 0.517 0.523 ANG -78.2 -120.9 -141.6 -154.5 -161.8 -168.1 -172.8 -176.5 179.1 176.8 173.5 170.7 168.8 166.3 163.6 161.7 160.8 157.7 156.4 154.5 MAG 31.25 20.22 14.16 10.81 8.74 7.34 6.30 5.56 4.93 4.46 4.07 3.75 3.51 3.26 3.07 2.88 2.74 2.62 2.49 2.40 S21 ANG 138.4 117.0 106.4 100.4 96.1 92.9 90.2 87.7 85.7 83.7 82.2 80.3 78.8 77.2 75.9 74.5 73.2 72.0 70.7 69.5 MAG 0.026 0.040 0.050 0.060 0.070 0.080 0.091 0.101 0.113 0.124 0.135 0.145 0.156 0.167 0.179 0.189 0.201 0.211 0.222 0.232 S12 ANG 64.0 57.9 58.9 61.5 63.7 65.8 67.1 68.3 69.0 69.5 69.8 70.2 70.2 70.1 70.4 70.4 70.2 69.8 69.9 69.4 MAG 0.679 0.469 0.362 0.311 0.283 0.268 0.258 0.253 0.249 0.249 0.249 0.251 0.251 0.254 0.256 0.260 0.263 0.268 0.275 0.280 S22 ANG -53.9 -87.5 -109.1 -124.4 -135.8 -145.4 -153.2 -159.6 -165.5 -170.7 -175.1 -179.3 176.9 173.5 170.4 167.6 164.8 162.1 159.6 157.1 Rev.5.00 Aug 10, 2005 page 7 of 8 2SC5758 Package Dimensions JEITA Package Code SC-89 Modified RENESAS Code PUSF0003ZA-A Package Name MFPAK / MFPAKV MASS[Typ.] 0.0016g D e A c LP E HE L A A b xM S A Reference Symbol Dimension in Millimeters e A2 A e1 A1 b b1 c b2 A-A Section Pattern of terminal position areas c1 S I1 A A1 A2 b b1 c c1 D E e HE L LP x b2 e1 I1 Min 0.55 0 0.55 0.15 0.1 1.35 0.7 1.15 0.1 0.15 Nom 0.22 0.2 0.13 0.11 1.4 0.8 0.45 1.2 0.2 Max 0.6 0.01 0.59 0.3 0.15 1.45 0.9 1.25 0.3 0.45 0.05 0.35 0.5 0.75 Ordering Information Part Name 2SC5758WF-TR-E Quantity 9000 Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Aug 10, 2005 page 8 of 8 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0 |
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